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ST13003N
High voltage fast-switching NPN power transistor
Features

High voltage capability Low spread of dynamic parameters Minimum lot-to-lot spread for reliable operation Very high switching speed
2 1
Applications
3
Compact fluorescent lamps (CFLs) SOT-32
Description
The device is manufactured using high voltage multi epitaxial planar technology for high switching speeds and high voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. Figure 1. Internal schematic diagram
Table 1.
Device summary
Marking 13003N Package SOT-32 Packaging BAG
Order code ST13003N
May 2009
Doc ID 15759 Rev 1
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Electrical ratings
ST13003N
1
Electrical ratings
Table 2.
Symbol VCES VCEO VEBO IC ICM IB IBM PTOT TSTG TJ
Absolute maximum ratings
Parameter Collector-emitter voltage (VBE = 0) Collector-emitter voltage (IB = 0) Collector-base voltage (IC = 0) Collector current Collector peak current (tP < 5 ms) Base current Base peak current (tP < 5 ms) Total dissipation at Tc = 25 C Storage temperature Max. operating junction temperature Value 700 400 9 1 2 0.5 1 20 -55 to 150 C 150 Unit V V V A A A A W
Table 3.
Symbol RthJC
Thermal data
Parameter Thermal resistance junction-case Value 6.25 Unit C/W
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Electrical characteristics
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Electrical characteristics
(Tcase = 25 C; unless otherwise specified) Table 4.
Symbol ICES IEBO VCEO(sus)
(1)
Electrical characteristics
Parameter Collector cut-off current (VBE = 0) Emitter cut-off current (IC = 0) Collector-emitter sustaining voltage (IB = 0) Collector-emitter saturation voltage Base-emitter saturation voltage DC current gain Inductive Load Storage time Fall time Test conditions VCE = 700 V VCE = 700 V VEB = 9 V IC = 10 mA IC = 0.5 A IC = 1 A IC = 0.5 A IC = 1 A IC = 0.5 A, IC = 1 A IB = 125 mA IB = 330 mA IB = 125 mA IB = 330 mA VCE = 2 V VCE = 10 V 6 5 2.5 180 400 0.7 1.2 1.2 1.3 18 15 s ns Min. Typ. Max. Unit 1 5 1 mA mA mA V V V V V
TC = 125 C
VCE(sat) (1) VBE(sat) (1) hFE
ts tf
IC = 0.4 A _ Vclamp = 300 V IB(on) = -IB(off) = 80 mA VBB(off) = - 5 V Figure 8
1. Pulsed duration = 300 s, duty cycle 1.5%
2.1
Electrical characteristics (curves)
Figure 2. Derating curve Figure 3. DC current gain (VCE = 3 V)
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Electrical characteristics Figure 4. DC current gain (VCE = 5 V) Figure 5.
ST13003N Collector-emitter saturation voltage
Figure 6.
Base-emitter saturation voltage
Figure 7.
Switching time inductive load
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Electrical characteristics
2.2
Test circuit
Figure 8. Inductive load switching test circuit
1. Fast electronic switch 2. Non-inductive resistor 3. Fast recovery rectifier
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Package mechanical data
ST13003N
3
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK(R) packages, depending on their level of environmental compliance. ECOPACK(R) specifications, grade definitions and product status are available at: www.st.com. ECOPACK(R) is an ST trademark.
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Package mechanical data
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Revision history
ST13003N
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Revision history
Table 5.
Date 26-May-2009
Document revision history
Revision 1 First release. Changes
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